2sc1162 silicon npn epitaxial application low frequency power amplifier complementary pair with 2sa715 outline 1 2 3 1. emitter 2. collector 3. base to-126 mod absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to base voltage v cbo 35 v collector to emitter voltage v ceo 35 v emitter to base voltage v ebo 5v collector current i c 2.5 a collector peak current i c(peak) 3a collector power dissipation p c 0.75 w p c * 1 10 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25 c.
2sc1162 2 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 35 v i c = 1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 35 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 5vi e = 1 ma, i c = 0 collector cutoff current i cbo 20 m av cb = 35 v, i e = 0 dc current transfer ratio h fe * 1 60 320 v ce = 2 v, i c = 0.5 a h fe 20 v ce = 2 v, i c = 1.5 a (pulse test) base to emitter voltage v be 0.93 1.5 v v ce = 2 v, i c = 1.5 a (pulse test) collector to emitter saturation voltage v ce(sat) 0.5 1.0 v i c = 2 a, i b = 0.2 a (pulse test) gain bandwidth product f t 180 mhz v ce = 2 v, i c = 0.2 a note: 1. the 2sc1162 is grouped by h fe as follows. bcd 60 to 120 100 to 200 160 to 320 0.8 0.6 0.4 0.2 0 50 100 150 200 ambient temperature ta ( c) collector power dissipation p c (w) maximum collector dissipation curve 0.75 2 0.5 0.1 52050 collector to emitter voltage v ce (v) collector current i c (a) area of safe operation 5 1.0 0.2 12 10 i c(max) (dc operation) t c = 25 c p c = 10 w
2sc1162 3 16 12 8 4 0 50 100 150 200 case temperature t c ( c) collector power dissipation p c (w) maximum collector dissipation curve 2.0 25 collector to emitter voltage v ce (v) typical output characteristics 1.6 0.4 134 0 0.8 1.2 i b = 0 t c = 25 c 2 ma 4 6 8 10 12 15 17 20 24 collector current i c (a) t c = 75 c v ce = 2 v 25 ?5 2.0 0.4 1.4 1.2 base to emitter voltage v be (v) collector current i c (a) typical transfer characteristics 0.02 0.05 0.1 0.2 0 0.6 0.8 1.0 0.01 0.2 0.5 1.0 280 3.0 collector current i c (a) dc current transfer ratio h fe 200 240 80 0.03 0.1 1.0 0 120 160 dc current transfer ratio vs.
collector current t c = 75 c v ce = 2 v 0.01 40 0.3 25 ?5
2sc1162 4 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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